本期内容
2022年6/7月刊
封面故事 Cover Story
优化氧化镓的生长
Optimising gallium oxide growth
来自AGNITRON公司的Fikadu Alema、Aaron Fine和Andrei osinsky,犹他大学的Arkka Bhattacharyya和加州大学的Sriram Krishnamoorthy
编者话 Editorial
碳化硅衬底创新技术大比拼
Silicon carbide substrate innovation technology competition
Wolfspeed专栏 Wolfspeed Column
碳化硅功率模块最大限度提高有源前端效率
Silicon Carbide Power Modules Maximize Active Front End Efficiency
业界动态 Industry
纳微半导体发布新产品NV6169,功率提升50%,进入电动汽车,太阳能 和数据中心行业
Navitas Semiconductor releases new product NV6169, with a 50% increase in power, entering the electric vehicle, solar energy and data center industries
IQE和Porotech合作开发MicroLED
IQE and Porotech collaborate on MicroLED
Wolfspeed全球首座200mm SiC工厂盛大开业,提升备受期待的器件生产
Wolfspeed opens world's first 200mm SiC factory, boosting production of highly anticipated devices
瀚天天成碳化硅产业园二期项目竣工
Epiworld's Silicon Carbide Industrial Park II Project Completed
SEMI报告: 
2022年全球晶圆厂设备支出预计将达到1090亿美元的新高
SEMI report: Global fab equipment spending expected to hit a new high of $109 billion in 2022
罗姆集团旗下的SiCrystal成立25周年
25th anniversary of SiCrystal, part of the ROHM Group
华润微入局GaN!收购第三代半导体厂商股份
China Resources Microelectronics enters GaN! Acquired shares of third-generation semiconductor manufacturers
技术 Technology
新型VCSEL加速光网络
Novel VCSELs speed optical networks
高亮度、高调制带宽的深紫外Micro-LED阵列
Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously
GaN RF 器件对太空任务足够可靠吗?
Are GaN RF devices reliable enough for space missions?
走向8英寸碳化硅
Shifting to 200 mm silicon carbide
科技前沿 Research Review
20Kg级InP高纯多晶合成取得突破
Breakthrough in the synthesis of 20Kg grade InP high-purity polycrystalline
Soitec 发布首款 200mm SmartSiCTM 优化衬底,拓展碳化硅产品组合
Soitec Expands Silicon Carbide Portfolio with First 200mm SmartSiC™ Optimized Substrate
超晶格抑制动态导通电阻的退化
Superlattice thwarts degradation in dynamic on-resistance
通过p-n结增强GaN-HEMTs的性能
Empowering GaN HEMTs with a p-n junction
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