本期内容
2024年 8/9 月刊
封面故事 Cover Story
未来晶体管
The transistor of the future
编者话 Editorial
碳化硅外延技术和产业化进展
The Progress of Silicon Carbide Epitaxial Technology and Industrialization
业界动态 Industry
英飞凌居林三厂正式落成 2025年开始量产
Infineon's third factory in Jülich has been officially completed and will start mass production in 2025.
最新发布!Park Systems重磅推出最先进的200毫米样品原子力显微镜Park FX200
Just released! Park Systems launches the most advanced 200-millimeter sample atomic force microscope, the Park FX200.
比利时半导体制造商BelGaN申请破产保护 寻求新的投资人
Belgian semiconductor makers declared bankrupt, over 400 jobs at risk
长飞先进与怀柔实验室签署碳化硅功率器件成果合作转化意向协议
Yangtze Optical Advanced and Huairou Laboratory signed an intention agreement for the cooperation and transformation of silicon carbide power device results.
Crystal IS使100 mm块状AlN衬底的可用面积达到99%
Crystal IS achieved 99% usable area on 100mm bulk AlN substrate
IQE计划让台湾子公司在台湾证券交易所进行首次公开募股
IQE plans IPO of Taiwan subsidiary on Taiwan Stock Exchange
最新公告: 
中国对这些物项实施出口管制
Latest Announcement: China imposes export controls on these items.
宽禁带半导体国家工程研究中心专栏 WBS Column
面向 5G 应用的高线性度氮化镓射频器件研究进展
Research Progress on High Linearity Gallium Nitride RF Devices for 5G Applications
科技前沿 Research Review
提高β-Ga2O3二极管的标准
Raising the bar for the β-Ga2O3
辐射加固的GaN HEMTs
Irradiation-hardened GaN HEMTs
通过雾CVD提高迁移率
Enhancing mobility with mist CVD
技术 Technology
假晶氮化物的能力
The power of pseudomorphic nitrid
氮化镓: 
在极端条件下的卓越表现
GaN: Excelling in the extreme
AlN: 
用低温外延打开大门
AlN: Opening doors with low-temperature epitaxy
利用InP PIC实现相干光通信
Enabling coherent optical communication with InP PICs
九峰山实验室专栏 JFS Laboratory Column
化合物半导体外延技术及应用
Compound semiconductor epitaxy technology and its applications
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