本期内容
2026年4/5月刊
封面故事 Cover Story
冰山尖下的氮化物
Nitrides below the tip of the iceberg
落基山国家实验室的 Andriy Zakutayev
编者话 Editorial
5000亿市场AR眼镜 —— 液相法才是破局钥匙
RMB 500B AR Glasses Market — Solution Growth Technology as the Key to Breaking the Deadlock
业界动态 Industry
从器件回归材料:
旭化成宣布聚焦氮化铝单晶衬底业务
From Devices Back to Materials: Asahi Kasei Announces Focus on Aluminum Nitride Single-Crystal Substrate Business
全球外延晶片龙头，成功赴港IPO
Global Epitaxial Wafer Leader Successfully Lists on Hong Kong Stock Exchange
英特尔宣布加入Terafab 先进晶圆厂计划
Intel Announces joining Terafab Advanced Wafer Fab Initiative
英国一项耗资1040 万英镑的项目将用于开发下一代材料
£10.4m UK project will grow next-gen materials
英伟达将与Qnity Electronics 合作研发半导体先进材料
NVIDIA to Collaborate with Qnity Electronics on Research and Development of Advanced Semiconductor Materials
圆满落幕！ 8 英寸碳化硅的“晶”界难题，被液相法解决了？这场会议聊透了！
Successfully Concluded! Has the "Crystal" Boundary Challenge of 8-inch Silicon Carbide Been Solved by the Solution Growth Method? This Conference Covered It All!
15.76 亿！中微公司宣布收购杭州众硅
1.576 Billion! AMEC Announces Acquisition of Hangzhou Zhonggui
技术 Technology
坩埚下降法4 英寸大厚度氧化镓晶体生长
Growth of 4-inch diameter and thick β-Ga2O3 single crystals using the vertical Bridgman method
面向自主创新的半导体芯片系统性分析方法论研究
Research on the Systematic Analysis Methodology of Semiconductor Chips
迈向太空晶体生长
Towards in-space crystal growth
工程衬底增强高压氮化镓功率电子
Engineered substrates enhance high-voltage GaN power electronics
科技前沿 Research Review
HF 处理助力 Ga2O3 MOSFET
HF treatment aids Ga2O3 MOSFETs
InP 激光器:
突破 10 W 大关
InP lasers: Breaking the 10 W barrier
极小化氧化提升了 SiC MOSFET 的迁移率
Minimal oxidation boosts mobility of SiC MOSFETs
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